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Abstract Optical spectroscopy is indispensable for research and development in nanoscience and nanotechnology, microelectronics, energy, and advanced manufacturing. Advanced optical spectroscopy tools often require both specifically designed high-end instrumentation and intricate data analysis techniques. Beyond the common analytical tools, deep learning methods are well suited for interpreting high-dimensional and complicated spectroscopy data. They offer great opportunities to extract subtle and deep information about optical properties of materials with simpler optical setups, which would otherwise require sophisticated instrumentation. In this work, we propose a computational approach based on a conventional tabletop optical microscope and a deep learning model called ReflectoNet . Without any prior knowledge about the multilayer substrates, ReflectoNet can predict the complex refractive indices of thin films and 2D materials on top of these nontrivial substrates from experimentally measured optical reflectance spectra with high accuracies. This task was not feasible previously with traditional reflectometry or ellipsometry methods. Fundamental physical principles, such as the Kramers–Kronig relations, are spontaneously learned by the model without any further training. This approach enables in-operando optical characterization of functional materials and 2D materials within complex photonic structures or optoelectronic devices. 

Abstract The electronic properties of 2D materials play a critical role in determining their potential for device applications. Despite rapid developments in 2D semiconductors, studies of fundamental electronic parameters, including the electronic gap and ionization energy, are limited, with significant discrepancies in reported values. The study focuses on tungsten disulfide (WS₂) and investigates the electronic structure of films comprising an increasing number of layers deposited with two different methods: direct synthesis via metal–organic chemical vapor deposition (MOCVD) and additive mechanical transfer of exfoliated single layers. The films are characterized via Raman, UV–vis, and photoluminescence spectroscopies, as well as ultraviolet photoelectron and inverse photoemission spectroscopies (UPS/IPES). The electronic gap of WS₂ is found to decrease from 2.43 eV for the monolayer to 1.97 eV for the trilayer, indicating a bulk transition at the trilayer thickness. This reduction in the electronic gap is primarily due to the downward shift of the conduction band minimum relative to the valence band maximum. A comparative analysis with MOCVD‐grown WS₂ reveals a slightly larger electronic gap for MOCVD‐grown samples, attributed to differences in defect densities. The electronic levels evaluated through UPS/IPES highlight the significant influence of preparation methods on the electronic properties of WS₂.